Interdefect charge exchange in silicon particle detectors at cryogenic temperatures

Silicon particle detectors in the next generation of experiments at the CERN Large Hadron Collider will be exposed to a very challenging radiation environment. The principal obstacle to long-term operation arises from changes in detector doping concentration (N/sub eff/), which lead to an increase i...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 49; no. 4; pp. 1750 - 1755
Main Authors MacEvoy, B., Santocchia, A., Hall, G., Moscatelli, F., Passeri, D., Bilei, G.M.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.08.2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Silicon particle detectors in the next generation of experiments at the CERN Large Hadron Collider will be exposed to a very challenging radiation environment. The principal obstacle to long-term operation arises from changes in detector doping concentration (N/sub eff/), which lead to an increase in the bias required to deplete the detector and hence achieve efficient charge collection. We have previously presented a model of interdefect charge exchange between closely spaced centers in the dense terminal clusters formed by hadron irradiation. This manifestly non-Shockley-Read-Hall (SRH) mechanism leads to a marked increase in carrier generation rate and negative space charge over the SRH prediction. There is currently much interest in the subject of cryogenic detector operation as a means of improving radiation hardness. Our motivation, however, is primarily to investigate our model further by testing its predictions over a range of temperatures. We present measurements of spectra from /sup 241/Am alpha particles and 1064-nm laser pulses as a function of bias between 120 and 290 K. Values of N/sub eff/ and substrate type are extracted from the spectra and compared with the model. The model is implemented in both a commercial finite-element device simulator (ISE-TCAD) and a purpose-built simulation of interdefect charge exchange. Deviations from the model are explored and comments made as to possible future directions for investigation of this difficult problem.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ObjectType-Article-2
ObjectType-Feature-1
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2002.801668