Ultrawide-bandgap semiconductor AlN crystals: growth and applications

In recent years, ultrawide bandgap semiconductor materials represented by aluminum nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power characteristics, stable high-temperature performance, low energy loss, and good ultraviolet (UV) transmittance. They have gr...

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Published inJournal of materials chemistry. C, Materials for optical and electronic devices Vol. 9; no. 6; pp. 1852 - 1873
Main Authors Yu, Ruixian, Liu, Guangxia, Wang, Guodong, Chen, Chengmin, Xu, Mingsheng, Zhou, Hong, Wang, Tailin, Yu, Jiaoxian, Zhao, Gang, Zhang, Lei
Format Journal Article
LanguageEnglish
Published Cambridge Royal Society of Chemistry 01.01.2021
Subjects
Aluminum nitride
Crystal growth
Crystals
Electronic devices
Energy dissipation
Light emitting diodes
Optoelectronic devices
Schottky diodes
Semiconductor materials
Thermal stability
Ultraviolet lasers
Wide bandgap semiconductors
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Summary:In recent years, ultrawide bandgap semiconductor materials represented by aluminum nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power characteristics, stable high-temperature performance, low energy loss, and good ultraviolet (UV) transmittance. They have great application prospects in the fields of high-efficiency optoelectronic devices, high-power and high-frequency electronic devices, ultra-high voltage power electronic devices, deep UV warning and guidance, and deep UV-LED disinfection. The physical vapor transport (PVT) method has the advantages of a simple growth process, fast growth rate, and high crystal integrity, and has gradually become one of the most effective methods for growing bulk AlN crystals. This review systematically summarizes the latest research progress in AlN crystals grown by the PVT method in recent years, and introduces their applications in deep UV-LEDs, UV lasers and Schottky barrier diodes (SBDs). Finally, the challenges and application prospects of AlN crystals are discussed. As an important new type of direct bandgap ultrawide bandgap semiconductor material, AlN crystals have shown extremely important strategic application value. The output power of deep UV-LED devices meets practical requirements, and high-power electronic power devices are still in the verification stage. From the perspective of material superiority, they have considerable development potential. This review systematically summarizes the latest research advances of AlN crystals grown by the PVT method and their applications.
Bibliography:Gang Zhao is an Assistant Professor in the School of Physics and Technology at University of Jinan. He received his PhD degree from State Key Lab of Crystal Materials, Shandong University, in 2017. Dr Zhao's research interests focus on synthesis and characterization of advanced two-dimension crystal nanomaterials for energy storage and conversion, and electro/photocatalysis applications.
Ruixian Yu is currently studying for his PhD in materials science at Shandong University. He received his BS and MS degrees from Qilu University of Technology in 2010 and 2018. His research interests include wide band gap semiconductor materials such as gallium nitride and aluminum nitride semiconductor materials.
Chengmin Chen received her doctoral degree (2012) from Tianjin University. She is now working at the Energy Institute, Qilu University of Technology (Shandong Academy of Sciences). Her current research interests focus on multiphase flow simulation, interface phenomena and phase change heat transfer.
Guangxia Liu is currently an assistant professor at the Energy Institute, Qilu University of Technology (Shandong Academy of Sciences). She received her BS and MS degrees in materials science from Qilu University of Technology in 2005 and 2008, respectively, and her PhD in materials science from Shandong University in 2014. Her research interests include crystal materials, perovskite materials and numerical simulation of heat transfer and fluid flow.
Lei Zhang is currently an associate professor at the State Key Laboratory of Crystal Materials, Shandong University. He received his BS and MS degrees in materials science from Qilu University of Technology in 2005 and 2008, respectively, and his PhD in materials science from Shandong University in 2011. He worked as a postdoctoral fellow at the Forschungszentrum Jülich GmbH in Germany during 2016-2018. His research interests include wide bandgap semiconductor materials, perovskite materials and related devices.
10.1039/d0tc04182c
Electronic supplementary information (ESI) available. See DOI
ISSN:2050-7526
2050-7534
DOI:10.1039/d0tc04182c