Structural, thermodynamic and magnetotransport properties of half-Heusler compound HoPtSb

Half-Heusler phase HoPtSb was studied by means of powder X-ray diffraction, scanning electron microscopy with energy-dispersive X-ray spectrometry, high-resolution transmission electron microscopy (HRTEM), heat capacity, magnetization, electrical resistivity and magnetoresistance. Measurements were...

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Published inJournal of alloys and compounds Vol. 829; p. 154467
Main Authors Ciesielski, K., Gnida, D., Borrmann, H., Ramlau, R., Prots, Yu, Szymański, D., Grin, Yu, Kaczorowski, D.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 15.07.2020
Elsevier BV
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Summary:Half-Heusler phase HoPtSb was studied by means of powder X-ray diffraction, scanning electron microscopy with energy-dispersive X-ray spectrometry, high-resolution transmission electron microscopy (HRTEM), heat capacity, magnetization, electrical resistivity and magnetoresistance. Measurements were performed in temperature range 2–300 K and magnetic fields up to 14 T. The results revealed significant atomic disorder in the crystal structure of this compound, and indicated that the electrical transport in HoPtSb is noticeably affected by scattering conduction electrons on structural inhomogeneities. Due to large value of the resistivity accompanied by small overall change of resistivity with changing temperature the high-temperature behavior was attributed to disorder-induced violation of the Matthiessen’s rule. In turn, at low temperatures, strong magnetic field of 14 T disclosed resistivity upturn reminiscent of Altshuler-Aronov quantum correction observed in disordered metallic systems. •Detailed physical characterization of relatively unknown half-Heusler phase HoPtSb.•Crystallographic disorder: local displacement of Pt atoms from the 4c Wyckoff site.•Violation of the Matthiessen’s rule in electrical resistivity induced by disorder.•Altshuler-Aronov quantum correction to electrical resistivity in magnetic fields.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2020.154467