APA (7th ed.) Citation

Chang, S., Kuo, C., Su, Y., Wu, L., Sheu, J., Wen, T., . . . Tsai, J. (2002). 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes. IEEE journal of selected topics in quantum electronics, 8(4), 744-748. https://doi.org/10.1109/JSTQE.2002.801677

Chicago Style (17th ed.) Citation

Chang, S.J, C.H Kuo, Y.K Su, L.W Wu, J.K Sheu, T.C Wen, W.C Lai, J.R Chen, and J.M Tsai. "400-nm InGaN-GaN and InGaN-AlGaN Multiquantum Well Light-emitting Diodes." IEEE Journal of Selected Topics in Quantum Electronics 8, no. 4 (2002): 744-748. https://doi.org/10.1109/JSTQE.2002.801677.

MLA (9th ed.) Citation

Chang, S.J, et al. "400-nm InGaN-GaN and InGaN-AlGaN Multiquantum Well Light-emitting Diodes." IEEE Journal of Selected Topics in Quantum Electronics, vol. 8, no. 4, 2002, pp. 744-748, https://doi.org/10.1109/JSTQE.2002.801677.