400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

• Published in: IEEE journal of selected topics in quantum electronics Vol. 8; no. 4; pp. 744 - 748
• Main Authors: Chang, S.J., Kuo, C.H., Su, Y.K., Wu, L.W., Sheu, J.K., Wen, T.C., Lai, W.C., Chen, J.R., Tsai, J.M.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.07.2002; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Aluminum gallium nitride; Barrier layers; Carrier confinement; Crystalline materials; Crystals; Current carriers; Degradation; Electroluminescence; Epitaxial growth; Epitaxial layers; Injection current; Leakage current; Light emitting diodes; Quantum well devices; Vapor phase epitaxy
• ISSN: 1077-260X; 1558-4542
• DOI: 10.1109/JSTQE.2002.801677

The 400-nm In/sub 0.05/Ga/sub 0.95/N-GaN MQW light-emitting diode (LED) structure and In/sub 0.05/Ga/sub 0.95/N-Al/sub 0.1/Ga/sub 0.9/N LED structure were both prepared by organometallic vapor phase epitaxy. It was found that the use of Al/sub 0.1/Ga/sub 0.9/N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20-mA electroluminescence intensity of InGaN-AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN-GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.