Localization effects in InGaAsN multi-quantum well structures

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 93; no. 1; pp. 55 - 59
• Main Authors: Hoffmann, A, Heitz, R, Kaschner, A, Lüttgert, T, Born, H, Egorov, A.Y, Riechert, H
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 30.05.2002; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Exciton dynamics; InGaAsN; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Photoluminescence; Physics; Quantum wells; InGaAsN; Exciton dynamics; Photoluminescence; Temperature dependence; Gallium arsenides; Inorganic compounds; Gallium nitrides; Multiple quantum well; Nitrogen; Indium arsenides; Excitons; Dynamics; Semiconductor quantum wells; Optical properties; Excitation spectrum; Indium nitrides; Localization; Quaternary compounds
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/S0921-5107(02)00044-2

The optical properties of InGaAsN/GaAs multiple quantum wells were investigated as a function of the nitrogen molar fraction. Time-integrated and time-resolved photoluminescence investigations demonstrate that localization effects at potential fluctuations play an important role in understanding the exciton dynamics. The results are supported by temperature-dependent photoluminescence and photoluminescence excitation investigations. In the last part, the state of the art of the 1.3 μm laser development is overviewed.