Localization effects in InGaAsN multi-quantum well structures
The optical properties of InGaAsN/GaAs multiple quantum wells were investigated as a function of the nitrogen molar fraction. Time-integrated and time-resolved photoluminescence investigations demonstrate that localization effects at potential fluctuations play an important role in understanding the...
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Published in | Materials science & engineering. B, Solid-state materials for advanced technology Vol. 93; no. 1; pp. 55 - 59 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
30.05.2002
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | The optical properties of InGaAsN/GaAs multiple quantum wells were investigated as a function of the nitrogen molar fraction. Time-integrated and time-resolved photoluminescence investigations demonstrate that localization effects at potential fluctuations play an important role in understanding the exciton dynamics. The results are supported by temperature-dependent photoluminescence and photoluminescence excitation investigations. In the last part, the state of the art of the 1.3 μm laser development is overviewed. |
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ISSN: | 0921-5107 1873-4944 |
DOI: | 10.1016/S0921-5107(02)00044-2 |