Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell

• Published in: IEEE electron device letters Vol. 31; no. 2; pp. 138 - 140
• Main Authors: YOON, Sung-Min, BYUN, Chun-Won, YANG, Shinhyuk, KO PARK, Sang-Hee, CHO, Doo-Hee, JUNG, Soon-Won, KANG, Seung-Youl, HWANG, Chi-Sun
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.02.2010; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Channels; Damage; Design optimization; Devices; Electronics; Exact sciences and technology; Fabrication; Ferroelectricity; Glass; Insulation; Insulators; Integrated circuits; Integrated circuits by function (including memories and processors); Magnetic and optical mass memories; Nonvolatile memory; Nonvolatile memory (NVM); oxide semiconductor; polymeric ferroelectric; Read-write memory; Recording and replay of audio and video signals; Semiconductivity; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Storage and reproduction of information; Substrates; Thin film transistors; thin-film transistor (TFT); Transistors; Zinc oxide; Cell structure; Memory devices; Nondestructive readout; thin-film transistor (TFT); Dielectric materials; polymeric ferroelectric; Optimization; Ferroelectric materials; Non volatile memory; oxide semiconductor; Integrated circuit; Memory transistor; Thin film transistor; Nonvolatile memory (NVM); Damaging
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2009.2036137

A two-transistor-type nonvolatile memory cell composed of one-access and one-memory thin-film transistors (TFTs) was demonstrated. ZnO and poly(vinylidene fluoride-trifluoroethylene) were employed as semiconducting channels for both TFTs and ferroelectric-gate insulator for memory TFT, respectively, in which the cell structures and fabrication procedures were so carefully designed and optimized as to effectively incorporate both TFTs on the same glass substrate without any critical process damage even below 200°C. The fabricated memory cell successfully showed the write and nondestructive readout operations.