Energy band and electron-vibration coupling in organic thin films: photoelectron spectroscopy as a powerful tool for studying the charge transport
This article describes the origins of the width of the highest occupied molecular orbital (HOMO) state observed in the ultraviolet photoemission spectra (UPS) of thin organic semiconductor films. Although much research has been performed on the electrical properties of organic devices, a lot of cruc...
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Published in | Applied physics. A, Materials science & processing Vol. 92; no. 3; pp. 495 - 504 |
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Main Authors | , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Berlin/Heidelberg
Springer-Verlag
01.08.2008
Springer |
Subjects | |
Online Access | Get full text |
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Summary: | This article describes the origins of the width of the highest occupied molecular orbital (HOMO) state observed in the ultraviolet photoemission spectra (UPS) of thin organic semiconductor films. Although much research has been performed on the electrical properties of organic devices, a lot of crucial problems still remain. Among these problems, the charge mobility in organic semiconductor systems is one the most important subjects to be elucidated. In order to discuss the mobility, it is essential to understand both the intermolecular interaction and the electron-molecular vibration coupling. Experimental measurements of the energy band dispersion give information about the intermolecular interaction, and experimental detection of the HOMO hole-vibration coupling is indispensable to comprehend impacts of the electron-vibration coupling on the hole transport. Since most of the information is hidden behind the finite bandwidth of the HOMO, only careful UPS measurements can provide information on these important phenomena related to charge carrier dynamics. In this article, we summarize our recent challenges on UPS measurements of organic thin films, which give the band dispersion of the HOMO and the HOMO hole-vibration coupling, and discuss the origins of the UPS bandwidth that relates to the charge carrier dynamics. |
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ISSN: | 0947-8396 1432-0630 |
DOI: | 10.1007/s00339-008-4553-8 |