Growth of large SiC single crystals

We have grown 6H-polytype SiC single crystal boules up to 60 mm in diameter by the physical vapor transport process at 2300°C. [0001] oriented substrate wafers prepared from these undoped crystals exhibit resistivities of up to 10 5 Ω cm and etch pit defect densities of 10 4−10 5 cm -2. Epitaxially-...

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Bibliographic Details
Published inJournal of crystal growth Vol. 128; no. 1; pp. 358 - 362
Main Authors Barrett, D.L., McHugh, J.P., Hobgood, H.M., Hopkins, R.H., McMullin, P.G., Clarke, R.C., Choyke, W.J.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.03.1993
Elsevier
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Growth from vapor
Materials science
Methods of crystal growth; physics of crystal growth
Physics
Crystal growth
Electrical conductivity
Crystal defect density
Epitaxy
High temperature
Experimental study
Single crystal
Inorganic compound
Dislocation
Growth from vapor
Etch pit
Silicon Carbides
Defect
Kinetics
Wafer
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Summary:We have grown 6H-polytype SiC single crystal boules up to 60 mm in diameter by the physical vapor transport process at 2300°C. [0001] oriented substrate wafers prepared from these undoped crystals exhibit resistivities of up to 10 5 Ω cm and etch pit defect densities of 10 4−10 5 cm -2. Epitaxially-grown microwave MESFET structures exhibit 5 GHz cutoff frequency; the highest reported to date.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(93)90348-Z