Carbon background in P-based III-V semiconductors grown by metalorganic molecular beam epitaxy using ethyl-metalorganic sources

Electrical properties of InP, GaP, InGaP and AlGaP, grown by metalorganic molecular beam epitaxy (MOMBE) using ethyl-metalorganics (triethyl-indium, -gallium and -alluminum), are discussed in connection with the carbon background. More C atoms are incorporated into epilayers in the order of AlGaP, G...

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Published inJournal of crystal growth Vol. 150; no. 1-4; pp. 241 - 245
Main Authors Yoshimoto, Masahiro, Tanaka, Sigehisa, Tsuji, Tsutsumi, Kurata, Hideaki, Nishimura, Kou, Matsunami, Hiroyuki
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 1995
Elsevier
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron density of states and band structure of crystalline solids
Electron states
Exact sciences and technology
Other inorganic compounds
Physics
Inorganic compounds
Ternary compounds
Organometallic compounds
Binary compounds
Aluminium phosphides
N-type conductors
Experimental study
Fabrication property relation
Carbon additions
Quantity ratio
Donors
Indium phosphides
Gap
Molecular beam epitaxy
P-type conductors
Carrier density
Acceptors
III-V semiconductors
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Summary:Electrical properties of InP, GaP, InGaP and AlGaP, grown by metalorganic molecular beam epitaxy (MOMBE) using ethyl-metalorganics (triethyl-indium, -gallium and -alluminum), are discussed in connection with the carbon background. More C atoms are incorporated into epilayers in the order of AlGaP, GaP and InP. The C atoms act as acceptors in AlGaP and GaP epilayers, but they probably work as donors in InP. InGaP showed highly resistive or compensated possibly due to the amphoteric nature of C atoms.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(95)80214-W