Magnetoresistance Characterization of NiFe Films With a Planar Point Contact
Magnetoresistance (MR) characterization of NiFe films was performed with a point-contact (PC) whose size was varied from several hundreds to around ten nm 2 by the ion milling process. Two kinds of MR origin, which were estimated to be domain wall MR (DWMR) and anisotropic MR (AMR), were observed by...
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Published in | IEEE transactions on magnetics Vol. 43; no. 6; pp. 3007 - 3009 |
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Main Author | |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
New York, NY
IEEE
01.06.2007
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | Magnetoresistance (MR) characterization of NiFe films was performed with a point-contact (PC) whose size was varied from several hundreds to around ten nm 2 by the ion milling process. Two kinds of MR origin, which were estimated to be domain wall MR (DWMR) and anisotropic MR (AMR), were observed by analytical decomposition of the R-H curves. The MRs showed contrastive dependence on the PC conductance due to difference of area in which they occurred. The DWMR in the PC increased as the PC size decreased and reached to a maximum of about 12.5%. The DWMR dependence on the NiFe-PC size coincided with that of fitting approximation based on some previous reports |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9464 1941-0069 |
DOI: | 10.1109/TMAG.2007.892179 |