Crosstalk Prediction of Single- and Double-Walled Carbon-Nanotube (SWCNT/DWCNT) Bundle Interconnects

• Published in: IEEE transactions on electron devices Vol. 56; no. 4; pp. 560 - 568
• Main Authors: Shao-Ning Pu, Wen-Yan Yin, Jun-Fa Mao, Liu, Q.H.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.04.2009; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Bundles; Bundling; Capacitance; Copper; Crosstalk; Design. Technologies. Operation analysis. Testing; double-walled carbon nanotubes (DWCNTs); Electronics; equivalent-circuit models; Exact sciences and technology; Inductance; Integrated circuit interconnections; Integrated circuit modeling; Integrated circuits; interconnect performance; Mathematical models; Resistance; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Single wall carbon nanotubes; single-walled carbon nanotubes (SWCNTs); Time delay; Wire; Performance evaluation; single-walled carbon nanotubes (SWCNTs); Crosstalk; Carbon nanotubes; Voltage spike; interconnect performance; Bundles; Nanotube bundle; Singlewalled nanotube; Spurious signal; Interconnection; Integrated circuit; Equivalent circuit; double-walled carbon nanotubes (DWCNTs); Delay time; Capacitive coupling; Advanced technology; Comparative study; equivalent-circuit models
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2009.2014429

The crosstalk effects in single- and double-walled carbon-nanotube (SWCNT and DWCNT) bundle-interconnect architectures are investigated in this paper. Some modified equivalent-circuit models are proposed for both SWCNT and DWCNT bundles, where capacitive couplings between adjacent bundles are incorporated. These circuit models are further used to predict the performance of SWCNT and DWCNT bundle interconnects in comparison with the Cu wire counterpart at all interconnect levels for advanced future technology generations. It is found that, compared with the SWCNT bundle, the DWCNT bundle interconnect can lead to a reduction of crosstalk-induced time delay, which will be more significant with increasing bundle length, while the peak voltage of the crosstalk-induced glitch in SWCNT and DWCNT bundle interconnects is in the same order as that of Cu wires. Due to the improvement in time delay, it is numerically confirmed that the DWCNT bundle interconnect will be more suitable for the next generation of interconnect technology as compared with the SWCNT bundle counterpart.