A comparative study of the models dealing with localized and semi-localized transitions in thermally stimulated luminescence

• Published in: Journal of physics. D, Applied physics Vol. 40; no. 19; pp. 5865 - 5872
• Main Authors: Kumar, Munish, Kher, R K, Bhatt, B C, Sunta, C M
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 07.10.2007; Institute of Physics
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other luminescence and radiative recombination; Physics; Thermoluminescence; Localized states; Charge carrier recombination; Rate equation; Radiation doses; Numerical method; Thermostimulated emission; Heat treatments; Thermoluminescence
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/0022-3727/40/19/011

Different models dealing with localized and semi-localized transitions, namely Chen-Halperin, Mandowski and the model based on the Braunlich-Scharmann (BS) approach are compared. It has been found that for recombination dominant situations (r < 1 where r is the retrapping parameter for localized transitions), the TSL glow curves arising from localized recombination coincide with all three models whereas for r 1, the three models differ. This implies that for localized transitions under recombination dominant situations, the Chen-Halperin model is the best representative of the thermally stimulated luminescence (TSL) process.