Effect of substrate temperature on the selectivity in low pressure chemical vapor deposition of aluminum

• Published in: Journal of the Electrochemical Society Vol. 139; no. 12; pp. 3578 - 3581
• Main Authors: LEE, K.-I, KIM, Y.-S, JOO, S.-K
• Format: Journal Article
• Language: English
• Published: Pennington, NJ Electrochemical Society 01.12.1992
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Metals. Metallurgy; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Crystal growth; Temperature; Selective growth; Support; Low pressure; Crystal nucleation; Aluminium; Kinetics; Experimental study; Chemical vapor deposition; Activation energy; Thin film
• ISSN: 0013-4651; 1945-7111
• DOI: 10.1149/1.2069125

Selective deposition of Al was carried out by the low pressure chemical vapor deposition (LPCVD) method. Selectivity between Si and silicon dioxide was investigated in a cold wall LPCVD system with tri-isobutyl-aluminum (TIBA) source. It has been found that the substrate temperature is the most important variable in determining the selectivity among other variables such as TIBA flow rate and TIBA pressure. Growth activation energy (1.1 plus /minus 0.15 eV) and nucleation activation energy (3.2 plus/minus 0.2 eV) for the Al deposition were determined from Arrhenius plot, and it could be concluded that the temperature dependence of the selectivity of Al between Si and SiO sub 2 came from the large difference ( approx 1 eV) in nucleation activation energies. It was suggested that topology improvement in chemically vapor deposited films could be made by pretreatment of the substrate which reduces the nucleation activation energy.