High-efficiency ion-implanted silicon solar cells

The development of solar cells with AM1 coversion efficiency of 18 percent is reported. The cells comprise an n + -p-p + structure fabricated from float zone silicon having resistivity of 0.3 Ω . cm. The n + and p + regions are formed by low energy ion implantation and thermal annealing. An importan...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 31; no. 5; pp. 546 - 550
Main Authors Spitzer, M.B., Tobin, S.P., Keavney, C.J.
Format Journal Article
LanguageEnglish
Published IEEE 01.05.1984
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Summary:The development of solar cells with AM1 coversion efficiency of 18 percent is reported. The cells comprise an n + -p-p + structure fabricated from float zone silicon having resistivity of 0.3 Ω . cm. The n + and p + regions are formed by low energy ion implantation and thermal annealing. An important feature of cell fabrication is the growth of SiO 2 passivation for reduction of surface recombination velocity. Details of both cell fabrication and testing are reported.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1984.21567