Contact and alignment marker technology for atomic scale device fabrication

This article reports on the technology to link atomic scale structures to macroscopic contact pads. Dedicated processes for electrode pattern formation in several materials have been developed and characterised. For pattern formation in CoSi 2 a thermal compromise between proper silicide formation a...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 41; pp. 567 - 570
Main Authors Zuiddam, M.R., Rogge, S., Geerligs, L.J., van der Drift, E., Ilge, B., Palasantzas, G.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.03.1998
Elsevier Science
Subjects
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Binary compound
Scanning probe microscopy
Roughness
Temperature effect
Metallizing
Electric contact
Chemical etching
Surface treatment
Rapid thermal annealing
Alignment
Microelectronic fabrication
Platinum
Tungsten
Cobalt Silicides
Atomic structure
Nanotechnology
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Summary:This article reports on the technology to link atomic scale structures to macroscopic contact pads. Dedicated processes for electrode pattern formation in several materials have been developed and characterised. For pattern formation in CoSi 2 a thermal compromise between proper silicide formation and lateral dimension loss has been established. The thermal stability of Pt and W submicron patterns (or the silicides of these) has been investigated. First results, for W in particular, show that atomically clean and flat surfaces can be realized coexisting with useful metallization patterns.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(98)00133-6