The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition

• Published in: Journal of crystal growth Vol. 225; no. 2-4; pp. 384 - 390
• Main Authors: Biefeld, R.M., Cederberg, J.G., Peake, G.M., Kurtz, S.R.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2001; Elsevier
• Subjects: A3. Metalorganic chemical vapor deposition; B1. Antimonides; B2. Semiconducting aluminum compounds; B2. Semiconducting indium compounds; B2. Semiconducting quaternary compounds; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; 73.40; 73.50.P; A3.Metalorganic chemical vapor deposition; B1.Antimonides; 81.15.G; B2.Semiconducting indium compounds; 52.75.R; B2.Semiconducting aluminum compounds; B2.Semiconducting quaternary compounds; Gallium arsenides; Inorganic compounds; Gallium antimonides; Zinc additions; Indium antimonides; Roughness; Operating mode; Surfaces; Crystal growth from vapors; Experimental study; MOCVD; Precursor; Crystal doping; Indium arsenides; Tellurium additions; Characterization; Thin films; CVD; Aluminium antimonides; MESA diode; IV characteristic; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)00886-7

The growth conditions for GaInAsSb and AlGaAsSb using metal-organic chemical vapor deposition in an high speed rotating disk reactor are described. Trimethylindium, triethylgallium, arsine, and trimethylantimony were used as precursors for the growth of GaInAsSb. Triethylgallium, ethyldimethylamine alane, triethylantimony, and arsine were the precursors used for the growth of AlGaAsSb. These materials were doped both n- and p-type using a mixture of diethyltellurium and diethylzinc as sources. An optimum growth temperature of 520°C was determined for the growth of GaInAsSb. Growth at this temperature yielded a root-mean-square (rms) surface roughness of 0.142nm. AlGaAsSb could be grown over the range of 500–600°C with somewhat rougher surfaces (rms>0.7nm). The photoluminescence was found to correlate with surface roughness, increasing with smoother surfaces. AlGaAsSb mesa isolated diodes were prepared and characterized. These diodes showed good current-voltage characteristics with breakdown voltages greater than −6V.