Hydrogen–rhodium complexes in silicon

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 58; no. 1; pp. 141 - 145
• Main Authors: Knack, S., Weber, J., Lemke, H.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 12.02.1999; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; DLTS; Electron states; Elemental semiconductors; Exact sciences and technology; Impurity and defect levels; Physics; Rh in Si; Rh–H complexes; Rh–H complexes; Rh in Si; DLTS; Defect states; Complex defect; Semiconductor materials; Hydrogen additions; Doped materials; Silicon; Rhodium additions; Experimental study
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/S0921-5107(98)00284-0

New hydrogen-induced deep levels in rhodium-doped n- and p-type silicon were observed after hydrogenation by wet-chemical etching. The levels were studied by DLTS measurements on Schottky diodes. We have found in n-type samples the levels E(150) at E C −0.33 eV; E(90) at E C −0.16 eV; and E(70) at E C −0.14 eV. Levels E(150) and E(270) belong to the substitutional rhodium donor and acceptor. Evidence is presented that the level E(70), which was formerly ascribed to isolated rhodium, is due to a hydrogen–rhodium complex. In p-type samples two levels were detected: H(280) at E V +0.50 eV and H(200) at E V +0.37 eV. Two different hydrogen–rhodium complexes are assigned to these levels. The thermal stability of the levels was investigated up to temperatures of 600 K.