Phase-Change-Driven Programmable Switch for Nonvolatile Logic Applications

• Published in: IEEE electron device letters Vol. 30; no. 4; pp. 371 - 373
• Main Authors: YOON, Sung-Min, JUNG, Soon-Won, LEE, Seung-Yun, PARK, Young-Sam, YU, Byoung-Gon
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.04.2009; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Channels; Circuit properties; Design. Technologies. Operation analysis. Testing; Devices; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Field programmable gate arrays; Functional programming; Integrated circuits; Integrated circuits by function (including memories and processors); Logic; Logic arrays; Logic devices; Logic programming; nonvolatile; Nonvolatile memory; Phase change materials; Phase change memory; phase-change memory (PCM); programmable; Programming; Scalability; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; switch; Switches; Switching, multiplexing, switched capacity circuits; nonvolatile; programmable; Non volatile memory; phase-change memory (PCM); Two channel system; Integrated circuit; Selector switch; PCM material; Logic; Pulse code modulation; switch
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2009.2013879

A new device concept for a programmable switch employing a phase-change memory element was proposed, in which a unique four-terminal structure having two operating channels was so designed as to effectively separate two functions of programming and pass-gating. The proposed device was successfully fabricated, and its operational behaviors were demonstrated.