Resistivity of Thin Copper Interconnection Layers

Resistivity is observed quantitatively in a thin electroplated copper layer. A resistivity of 2.6 µΩ·cm is observed in a 600-nm-thick as-deposited copper layer by conventional electroplating. This resistivity increases rapidly with decreasing thickness and reaches 7.8 µΩ·cm at a thickness of 75 nm....

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 44; no. 3L; p. L408
Main Authors Hara, Tohru, Shimura, Yasu, Namiki, Ken
Format Journal Article
LanguageEnglish
Published 01.01.2005
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Summary:Resistivity is observed quantitatively in a thin electroplated copper layer. A resistivity of 2.6 µΩ·cm is observed in a 600-nm-thick as-deposited copper layer by conventional electroplating. This resistivity increases rapidly with decreasing thickness and reaches 7.8 µΩ·cm at a thickness of 75 nm. This rapid increase is mainly due to the increase in the orientation ratio of the copper (111)/(200). The resistivity in the as-deposited layer is maintained at 2.2 µΩ·cm in a 75 nm low resistivity layer with a low orientation ratio. Such a low-resistivity thin layer is electroplated practically by newly developed process. The preparation of a low-stress seed layer is also required in this electroplating process.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.L408