Switching characteristics of a thin film SOI power MOSFET

This paper describes switching characteristics of a thin-film silicon-on-insulator (SOI) power metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the results of numerically simulating thin-film SOI power MOSFETs in the 50-V class. The dependence of the rise time and fall time on t...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 34; no. 2B; pp. 817 - 821
Main Authors MATSUMOTO, S, KIM, I.-J, SAKAI, T, FUKUMITSU, T, YACHI, T
Format Conference Proceeding Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 1995
Subjects
Applied sciences
Electronics
Exact sciences and technology
Other multijunction devices. Power transistors. Thyristors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Buried layer
Impurity density
Oxide layer
Cross section
Performance characteristic
High frequency transistor
Theoretical study
Self
Doping profile
Switching
Power transistor
Thickness
Field effect transistor
Time dependence
Breakdown voltage
Switching conditions
Complementary MOS technology
Capacitance
Numerical simulation
Thin film transistor
High frequency
Resistor
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Summary:This paper describes switching characteristics of a thin-film silicon-on-insulator (SOI) power metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the results of numerically simulating thin-film SOI power MOSFETs in the 50-V class. The dependence of the rise time and fall time on the doping concentration of the substrate, on the doping type of the substrate, and on the thickness of the buried oxide layer are studied. In addition, the optimum device structure of the thin-film SOI power MOSFET for high-frequency switching application is also described.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.34.817