Properties of Semipolar GaN Grown on a Si(100) Substrate

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 53; no. 7; pp. 989 - 992
• Main Authors: Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Seredova, N. V., Solomnikova, A. V., Shcheglov, M. P., Kibalov, D. S., Smirnov, V. K.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.07.2019; Springer; Springer Nature B.V
• Subjects: Basal plane; Buffer layers; CHEMICAL VAPOR DEPOSITION; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL GROWTH; Crystals; DIFFRACTION; EXCITONS; Fabrication; GALLIUM NITRIDES; LAYERS; Liquors; LUMINESCENCE; Magnetic Materials; Magnetism; Metalorganic chemical vapor deposition; NANOSTRUCTURES; Optical properties; Organic chemicals; Organic chemistry; ORGANOMETALLIC COMPOUNDS; Physics; Physics and Astronomy; RECOMBINATION; SILICON; SILICON CARBIDES; Silicon compounds; Silicon substrates; STACKING FAULTS; Testing of Materials and Structures; Treatment
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782619070054

Semipolar GaN layers synthesized on a nanostructured Si(100) substrate are studied. It is shown that using a Si(100) nanoprofile combined with Si x N y nanostrips on top of nanostructures can yield, via metal-organic chemical-vapor deposition, GaN(10 2) layers. An additional SiC buffer layer makes it possible to obtain GaN(10 1) layers with a full-width at half-maximum of the diffraction-curve of ω θ ≈ 35′ arcmin. It is found that the luminescence properties of the semipolar layers are mostly due to basal plane stacking faults BSF S -I 1 , in contrast to polar layers in which these properties are mostly due to the recombination of excitons.