High-Efficiency Push-Pull Power Amplifier With High Operation Voltage

• Published in: IEEE microwave and wireless components letters Vol. 17; no. 5; pp. 382 - 384
• Main Authors: YIM, Jounghyun, KIM, Ildu, KANG, Daehyun, KIM, Bumman
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.05.2007; Institute of Electrical and Electronics Engineers
• Subjects: Amplifiers; Applied sciences; Capacitors; Circuit properties; Circuits; Class D; Drains; Electric potential; Electric, optical and optoelectronic circuits; Electronic circuits; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Grounds; High power amplifiers; Inductors; Microwaves; Operational amplifiers; power amplifier (PA); Power amplifiers; Power generation; push-pull; Push-pull amplifiers; Radio frequency; Radiofrequency amplifiers; stack-up; Stacking; Voltage; Performance evaluation; Radio wave; Output power; stack-up; Lateral diffusion; Class D; power amplifier (PA); MOS structure; Power supply; Radiofrequency; Power series; High voltage; Push pull connection; Bias voltage; push-pull; Series expansion; Active component; Drain voltage; Power amplifier
• ISSN: 1531-1309; 1558-1764
• DOI: 10.1109/LMWC.2007.895722

A highly efficient push-pull class D power amplifier (PA) with a high operation voltage is presented. The high voltage is realized by stacking dc biases of two push-pull amplifiers through the virtual ground point, while the radio frequency powers are series combined. The drain supply voltage is increased to 44V, which is double of the rated bias voltage (22V) of the active devices. The LDMOS PA provides an output power of 40.6dBm with a power-added efficiency (PAE) of 58.7% at 836.5MHz. Each push-pull amplifier provides 38-dBm output with a PAE of 64%