Electrical Activity of Extended Defects in Multicrystalline Silicon

The excess carrier lifetime (τ) distribution in multicrystalline silicon grown by the Bridgman technique from high-purity metallurgical silicon (HPMG-Si) is studied. The features of the variation in τ, caused by the grain-boundary structure of ingots, are revealed. The grain boundaries, dislocations...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 52; no. 2; pp. 254 - 259
Main Authors Pescherova, S. M., Yakimov, E. B., Nepomnyashchikh, A. I., Pavlova, L. A., Feklisova, O. V., Presnyakov, R. V.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.02.2018
Springer
Springer Nature B.V
Subjects
Bridgman method
CARRIER LIFETIME
Crystal defects
DEFECTS
Dislocations
Electric properties
ELECTRON MICROPROBE ANALYSIS
Electron microscopy
Electron probe microanalysis
Fabrication
GRAIN BOUNDARIES
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Metallurgical analysis
Physics
Physics and Astronomy
Polycrystals
SCANNING ELECTRON MICROSCOPY
SILICON
Solar energy
Testing of Materials and Structures
Treatment
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Summary:The excess carrier lifetime (τ) distribution in multicrystalline silicon grown by the Bridgman technique from high-purity metallurgical silicon (HPMG-Si) is studied. The features of the variation in τ, caused by the grain-boundary structure of ingots, are revealed. The grain boundaries, dislocations, and impurity microinclusions are studied by electron probe microanalysis (EPMA) and scanning electron microscopy (SEM) using selective acid etching. The electrical activity of extended defects is measured by the electronbeam- induced-current (EBIC) method.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618020124