Optimization of 10-Gb/s long-wavelength floating guard ring InGaAs-InP avalanche photodiodes

We demonstrate long-wavelength (/spl lambda/ = 1.3 and 1.5 μm) high-speed (10 Gb/s) InGaAs-InP separate absorption-grading-and-multiplication region avalanche photodiodes (SAGM-APDs) employing a double diffused floating guard ring (FGR) structure to eliminate edge breakdown. The simple /spl ges/ 60-...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 14; no. 7; pp. 977 - 979
Main Authors Ran Wei, Dries, J.C., Hongsheng Wang, Lange, M.L., Olsen, G.H., Forrest, S.R.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.07.2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Absorption
Avalanche breakdown
Avalanche photodiodes
Avalanches
Bandwidth
Diffusion
Electric breakdown
Floating structures
Guards
High speed
Indium gallium arsenide
Indium phosphide
Noise measurement
Optical noise
Optimization
Photodiodes
Thin films
Tunneling
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Summary:We demonstrate long-wavelength (/spl lambda/ = 1.3 and 1.5 μm) high-speed (10 Gb/s) InGaAs-InP separate absorption-grading-and-multiplication region avalanche photodiodes (SAGM-APDs) employing a double diffused floating guard ring (FGR) structure to eliminate edge breakdown. The simple /spl ges/ 60-GHz gain-bandwidth product double diffused FGR structure was optimized using theoretical and experimental studies. The APD excess noise factor was measured, and suggests that dead-length effects must be considered in designing high bandwidth devices with thin multiplication layers.
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ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2002.1012404