Growth Mechanism and Properties of Self-Assembled InN Nanocolumns on Al Covered Si(111) Substrates by PA-MBE

Self-assembled InN nanocolumns were grown at low temperatures by plasma-assisted molecular beam epitaxy with a high crystalline quality. The self-assembling procedure was carried out on AlN/Al layers on Si(111) substrates avoiding the masking process. The Al interlayer on the Si(111) substrate preve...

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Published inMaterials Vol. 12; no. 19; p. 3203
Main Authors Casallas-Moreno, Y. L., Gallardo-Hernández, S., Yee-Rendón, C. M., Ramírez-López, M., Guillén-Cervantes, A., Arias-Cerón, J. S., Huerta-Ruelas, J., Santoyo-Salazar, J., Mendoza-Álvarez, J. G., López-López, M.
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 30.09.2019
MDPI
Subjects
Aluminum
Crystal defects
Crystal dislocations
Crystal structure
Crystallinity
Epitaxial growth
High resolution electron microscopy
Interlayers
Lasers
Low temperature
Molecular beam epitaxy
Morphology
Nitrogen
Nucleation
Optical properties
Photoluminescence
Plasma
Radiation
Scanning electron microscopy
Self-assembly
Sensors
Silicon substrates
Spectrum analysis
United States > US
Japan
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Summary:Self-assembled InN nanocolumns were grown at low temperatures by plasma-assisted molecular beam epitaxy with a high crystalline quality. The self-assembling procedure was carried out on AlN/Al layers on Si(111) substrates avoiding the masking process. The Al interlayer on the Si(111) substrate prevented the formation of amorphous SiN. We found that the growth mechanism at 400 ∘ C of InN nanocolumns started by a layer-layer (2D) nucleation, followed by the growth of 3D islands. This growth mechanism promoted the nanocolumn formation without strain. The nanocolumnar growth proceeded with cylindrical and conical shapes with heights between 250 and 380 nm. Detailed high-resolution transmission electron microscopy analysis showed that the InN nanocolumns have a hexagonal crystalline structure, free of dislocation and other defects. The analysis of the phonon modes also allowed us to identify the hexagonal structure of the nanocolumns. In addition, the photoluminescence spectrum showed an energy transition of 0.72 eV at 20 K for the InN nanocolumns, confirmed by photoreflectance spectroscopy.
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ISSN:1996-1944
1996-1944
DOI:10.3390/ma12193203