Integrated silicon microbeam PI-FET accelerometer

Integrated accelerometers showing excellent linearity have been designed and fabricated using silicon planar technology, zinc-oxide sputtering, and anisotropic etching. Small cantilevered beam structures overcoated with piezoelectric ZnO films act as force transducers, and the electrical signal is d...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 29; no. 1; pp. 27 - 33
Main Authors Pau-Ling Chen, Muller, R.S., Jolly, R.D., Halac, G.L., White, R.M., Andrews, A.P., Lim, T.C., Motamedi, M.E.
Format Journal Article
LanguageEnglish
Published IEEE 01.01.1982
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Summary:Integrated accelerometers showing excellent linearity have been designed and fabricated using silicon planar technology, zinc-oxide sputtering, and anisotropic etching. Small cantilevered beam structures overcoated with piezoelectric ZnO films act as force transducers, and the electrical signal is directly coupled to the gate of a depletion-mode, p-channel MOS transistor. The accelerometers have a nearly flat response from very low frequencies until beam resonances become significant (above 40 kHz). The near-dc response results from completely isolating the piezoelectric film from electrical leakage paths. Measured performance has matched very well with theory. Theoretical analysis has been used to derive useful design tradeoffs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1982.20654