Complete Deep-Submicron Metal-Oxide-Semiconductor Field-Effect-Transistor Drain Current Model Including Quantum Mechanical Effects

In this paper, we present a new complete drain current model for metal-oxide-semiconductor field-effect-transistor devices with very thin gate oxide thickness and short-channel length. The model was developed using the drift-diffusion equation and the quasi-two-dimensional Poisson equation. The effe...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 38; no. 2R; p. 687
Main Authors Jang, Sheng-Lyang, Chyau, Chwan-Gwo, Sheu, Chorng-Jye
Format Journal Article
LanguageEnglish
Published 01.02.1999
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Summary:In this paper, we present a new complete drain current model for metal-oxide-semiconductor field-effect-transistor devices with very thin gate oxide thickness and short-channel length. The model was developed using the drift-diffusion equation and the quasi-two-dimensional Poisson equation. The effects of the inversion layer centroid due to the quantum mechanical effect and the drain-induced-barrier-lowering due to short-channel length are taken into account in this model. The accuracy of this model has been checked by the experimental data of thin gate-oxide and short-channel devices.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.687