A Novel Approach for Stability Analysis in Carbon Nanotube Interconnects

• Published in: IEEE electron device letters Vol. 30; no. 5; pp. 475 - 477
• Main Authors: Fathi, D., Forouzandeh, B.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.05.2009; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Bundling; Carbon nanotube (CNT); Carbon nanotubes; Contact resistance; Criteria; Design. Technologies. Operation analysis. Testing; Devices; Electronics; Electrons; Electrostatics; Exact sciences and technology; Inductance; Integrated circuit interconnections; Integrated circuits; interconnect; Kinetic theory; Mathematical models; Nyquist; Particle scattering; Quantum capacitance; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Stability; Stability analysis; Transmission lines; Nyquist; Interconnection; Integrated circuit; Carbon nanotubes; Carbon nanotube (CNT); Nyquist criterion; Stability criterion; TLM method; interconnect; stability
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2009.2017388

This letter introduces a new method for stability analysis of carbon nanotube (CNT) interconnects based on transmission line modeling and using the Nyquist stability criterion for the first time. Using this new method, the degree of relative stability for CNT bundle interconnects, versus the length of bundle and the diameter of each individual CNT, has been obtained. The obtained results show that with increasing the length of the CNT bundle and the diameter of each individual CNT interconnect, the relative stability increases, and the system becomes more stable.