Reliability modeling of capacitive RF MEMS

The kinetic of dielectric charging in capacitive RF microelectromechanical systems (RF MEMS) is investigated using an original method of stress and monitoring. This effect is investigated through a new parameter: the shift rate of the actuation voltages. We demonstrate that this lifetime parameter h...

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Bibliographic Details
Published inIEEE transactions on microwave theory and techniques Vol. 53; no. 11; pp. 3482 - 3488
Main Authors Melle, S., De Conto, D., Dubuc, D., Grenier, K., Vendier, O., Muraro, J.-L., Cazaux, J.-L., Plana, R.
Format Journal Article Conference Proceeding
LanguageEnglish
Published New York, NY IEEE 01.11.2005
Institute of Electrical and Electronics Engineers
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:The kinetic of dielectric charging in capacitive RF microelectromechanical systems (RF MEMS) is investigated using an original method of stress and monitoring. This effect is investigated through a new parameter: the shift rate of the actuation voltages. We demonstrate that this lifetime parameter has to be considered as a function of the applied voltage normalized by the contact quality between the bridge and the dielectric. We also demonstrate that this phenomenon is related to Frenkel-Poole conduction, which takes place into the dielectric. We finally propose a model that describes the dielectric charging kinetic in capacitive RF MEMS. This model is used to extract a figure-of-merit of capacitive switches lifetime.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2005.857109