Reliability modeling of capacitive RF MEMS
The kinetic of dielectric charging in capacitive RF microelectromechanical systems (RF MEMS) is investigated using an original method of stress and monitoring. This effect is investigated through a new parameter: the shift rate of the actuation voltages. We demonstrate that this lifetime parameter h...
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Published in | IEEE transactions on microwave theory and techniques Vol. 53; no. 11; pp. 3482 - 3488 |
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Main Authors | , , , , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
New York, NY
IEEE
01.11.2005
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | The kinetic of dielectric charging in capacitive RF microelectromechanical systems (RF MEMS) is investigated using an original method of stress and monitoring. This effect is investigated through a new parameter: the shift rate of the actuation voltages. We demonstrate that this lifetime parameter has to be considered as a function of the applied voltage normalized by the contact quality between the bridge and the dielectric. We also demonstrate that this phenomenon is related to Frenkel-Poole conduction, which takes place into the dielectric. We finally propose a model that describes the dielectric charging kinetic in capacitive RF MEMS. This model is used to extract a figure-of-merit of capacitive switches lifetime. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9480 1557-9670 |
DOI: | 10.1109/TMTT.2005.857109 |