Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes

The spectrum of ultraviolet (UV) InGaN/GaN light-emitting diodes and its dependence on the current flowing through the structure are studied. The intensity of the UV contribution to the integrated diode luminescence increases steadily with increasing density of current flowing through the structure,...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 50; no. 11; pp. 1493 - 1498
Main Authors Shamirzaev, V. T., Gaisler, V. A., Shamirzaev, T. S.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.11.2016
Springer
Springer Nature B.V
Subjects
2016
Conferences and conventions
Conferences, meetings and seminars
ELECTRIC CURRENTS
ELECTROLUMINESCENCE
Electronic components
EXCITATION
GALLIUM NITRIDES
INDIUM COMPOUNDS
Indium gallium nitrides
LEDs
LIGHT EMITTING DIODES
Magnetic Materials
Magnetism
March 14–18
MATERIALS SCIENCE
Nizhny Novgorod
Physics
Physics and Astronomy
QUANTUM EFFICIENCY
ULTRAVIOLET RADIATION
ULTRAVIOLET SPECTRA
VISIBLE RADIATION
XX International Symposium “Nanophysics and Nanoelectronics”
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Summary:The spectrum of ultraviolet (UV) InGaN/GaN light-emitting diodes and its dependence on the current flowing through the structure are studied. The intensity of the UV contribution to the integrated diode luminescence increases steadily with increasing density of current flowing through the structure, despite a drop in the emission quantum efficiency. The electroluminescence excitation conditions that allow the fraction of UV emission to be increased to 97% are established. It is shown that the nonuniform generation of extended defects, which penetrate the active region of the light-emitting diodes as the structures degrade upon local current overheating, reduces the integrated emission intensity but does not affect the relative intensity of diode emission in the UV (370 nm) and visible (550 nm) spectral ranges.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616110233