Effect of gamma irradiation on the photoluminescence of porous silicon

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 51; no. 4; pp. 483 - 487
• Main Authors: Elistratova, M. A., Romanov, N. M., Goryachev, D. N., Zakharova, I. B., Sreseli, O. M.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.04.2017; Springer; Springer Nature B.V
• Subjects: Composite Semiconductors; ELECTROCHEMISTRY; EMISSION SPECTRA; Food irradiation; FULLERENES; Gamma irradiation; GAMMA RADIATION; HYDROGEN; Ionizing radiation; IRRADIATION; LAYERS; Luminescence; Magnetic Materials; Magnetism; MATERIALS RECOVERY; MATERIALS SCIENCE; Microcrystalline; Nanocrystalline; Optical properties; OXIDATION; PASSIVATION; Passivity; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; Physics; Physics and Astronomy; Porous; POROUS MATERIALS; Porous silicon; RADIATION DOSES; SILICON; Spectra; SURFACES
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782617040029

The effect of gamma irradiation on the luminescence properties of porous silicon produced by the electrochemical technique is studied. Changes in the photoluminescence intensity between irradiation doses and over a period of several days after the last irradiation are recorded. The quenching of photoluminescence at low irradiation doses and recovery after further irradiation are registered. It is found that porous silicon is strongly oxidized after gamma irradiation and the oxidation process continues for several days after irradiation. It is conceived that the change in the photoluminescence spectra and intensity of porous silicon after gamma irradiation is caused by a change in the passivation type of the porous surface: instead of hydrogen passivation, more stable oxygen passivation is observed. To stabilize the photoluminescence spectra of porous silicon, the use of fullerenes is proposed. No considerable changes in the photoluminescence spectra during irradiation and up to 18 days after irradiation are detected in a porous silicon sample with a thermally deposited fullerene layer. It is shown that porous silicon samples with a deposited C 60 layer are stable to gamma irradiation and oxidation.