Analytical Model of Trapping Effects in Organic Thin-Film Transistors

• Published in: IEEE transactions on electron devices Vol. 56; no. 4; pp. 546 - 552
• Main Authors: Erlen, C., Lugli, P.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.04.2009; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Analytical models; Applied sciences; Approximation; Charge carrier processes; Current voltage characteristics; Electron traps; Electronics; Exact sciences and technology; Insulators; Mathematical analysis; Mathematical models; Mobile communication; Organic thin film transistors; Organic thin-film transistor (OTFT); semiconductor device modeling; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Simulation; SPICE; Thin film transistors; Thin films; Transistors; Trapping; Organic thin-film transistor (OTFT); Semiconductor device; Voltage current curve; semiconductor device modeling; Analytical method; SPICE; Thin film transistor; trapping; Modeling; Comparative study; Drift mobility; Organic electronics
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2008.2011936

We report an analytical model for organic thin-film transistors that accounts for the influence of trap states on the current voltage characteristics. As the subthreshold regime sensitively reacts to the presence of traps, it is used to extract approximate trap parameters from experimental transistor data. To demonstrate the capability of our method, a comparison with the results of 2-D drift-diffusion simulations is provided.