Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface

Comparative studies of the specific features of the composition and photoluminescence properties of porous silicon with different morphologies are carried out by infrared and photoluminescence spectroscopy. On the basis of the experimental data and commonly accepted theoretical models, the main fact...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 52; no. 3; pp. 324 - 330
Main Author Lenshin, A. S.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.03.2018
Springer
Springer Nature B.V
Subjects
Analysis
Composite Semiconductors
Hydrogen
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Microcrystalline
Nanocrystalline
Optical properties
PHOTOLUMINESCENCE
Physics
Physics and Astronomy
Polyacrylic acid
Porous
POROUS MATERIALS
Porous silicon
Semiconductors (Materials)
SILICON
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Summary:Comparative studies of the specific features of the composition and photoluminescence properties of porous silicon with different morphologies are carried out by infrared and photoluminescence spectroscopy. On the basis of the experimental data and commonly accepted theoretical models, the main factors that influence the photoluminescence intensity and its deterioration upon the exposure of porous silicon to directed radiation in the visible region are established. By the example of porous silicon with 50–100 nm pores, the possibility of improving the above characteristics by chemical treatment in polyacrylic acid is shown.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618030156