Strained multilayer structures with pseudomorphic GeSiSn layers

The temperature and composition dependences of the critical thickness of the 2D–3D transition for a GeSiSn film on Si(100) have been studied. The regularities of the formation of multilayer structures with pseudomorphic GeSiSn layers directly on a Si substrate, without relaxed buffer layers, were in...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 50; no. 12; pp. 1584 - 1588
Main Authors Timofeev, V. A., Nikiforov, A. I., Tuktamyshev, A. R., Yesin, M. Yu, Mashanov, V. I., Gutakovskii, A. K., Baidakova, N. A.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.12.2016
Springer
Springer Nature B.V
Subjects
2016
Buffer layers
CRYSTAL STRUCTURE
Electron microscopy
Electrons
GERMANIUM SILICIDES
LATTICE PARAMETERS
LAYERS
Magnetic Materials
Magnetism
March 14–18
MATERIALS SCIENCE
Multilayers
Nizhny Novgorod
PHOTOLUMINESCENCE
Physics
Physics and Astronomy
SILICON
Silicon substrates
STRAINS
SUBSTRATES
THIN FILMS
TIN COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY
XX International Symposium “Nanophysics and Nanoelectronics”
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Summary:The temperature and composition dependences of the critical thickness of the 2D–3D transition for a GeSiSn film on Si(100) have been studied. The regularities of the formation of multilayer structures with pseudomorphic GeSiSn layers directly on a Si substrate, without relaxed buffer layers, were investigated for the first time. The possibility of forming multilayer structures based on pseudomorphic GeSiSn layers has been shown and the lattice parameters have been determined using transmission electron microscopy. The grown structures demonstrate photoluminescence for Sn contents from 3.5 to 5% in GeSiSn layers.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261612023X