Role of heavy-ion nuclear reactions in determining on-orbit single event error rates

Simulations show that neglecting ion-ion interaction processes (both particles having Z>1) results in an underestimation of the total on-orbit single event upset error rate by more than two orders of magnitude for certain technologies. The inclusion of ion-ion nuclear reactions leads to dramatica...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 52; no. 6; pp. 2182 - 2188
Main Authors Howe, C.L., Weller, R.A., Reed, R.A., Mendenhall, M.H., Schrimpf, R.D., Warren, K.M., Ball, D.R., Massengill, L.W., LaBel, K.A., Howard, J.W., Haddad, N.F.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2005
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:Simulations show that neglecting ion-ion interaction processes (both particles having Z>1) results in an underestimation of the total on-orbit single event upset error rate by more than two orders of magnitude for certain technologies. The inclusion of ion-ion nuclear reactions leads to dramatically different SEU error rates for CMOS devices containing high Z materials compared with direct ionization by the primary ion alone. Device geometry and material composition have a dramatic effect on charge deposition in small sensitive volumes for the spectrum of ion energies found in space, compared with the limited range of energies typical of ground tests.
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ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2005.860683