Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation

A method for mathematical processing of the results of measurements of the capacitance–voltage characteristics for an AlGaN/GaN HEMT (high electron mobility transistor) before and after γ-neutron irradiation with a fluence of 0.4 × 10 14 cm –2 is suggested. The results of physical–topological simula...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 51; no. 11; pp. 1490 - 1494
Main Authors Tarasova, E. A., Obolensky, S. V., Galkin, O. E., Hananova, A. V., Makarov, A. B.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.11.2017
Springer
Springer Nature B.V
Subjects
2017
Aluminum gallium nitrides
Analysis
Capacitance-voltage characteristics
Computer simulation
Electron distribution
ELECTRON MOBILITY
Electrons
GALLIUM NITRIDES
Integrated circuits
IRRADIATION
Liquor
Magnetic Materials
Magnetism
March 13–16
MATERIALS SCIENCE
Neutron irradiation
Neutrons
Nizhny Novgorod
Numerical analysis
Physics
Physics and Astronomy
Radiation (Physics)
SILICON CARBIDES
XXI International Symposium “Nanophysics and Nanoelectronics”
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Summary:A method for mathematical processing of the results of measurements of the capacitance–voltage characteristics for an AlGaN/GaN HEMT (high electron mobility transistor) before and after γ-neutron irradiation with a fluence of 0.4 × 10 14 cm –2 is suggested. The results of physical–topological simulation of an AlGaN/GaN HEMT on a SiC substrate are described. The error in calculating the GaN HEMT parameters due to inaccuracy in determining the electron distribution profile is determined.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617110264