Analytical Model of Atomic Layer Deposition of Films on 3D Structures with High Aspect Ratios

A theoretical model has been suggested that makes it possible to predict the profile of a film deposited on the walls of a high aspect ratio structure (trench) by atomic layer deposition versus the deposition parameters. In addition, the model allows one to calculate the optimal time of precursor do...

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Bibliographic Details
Published inTechnical physics Vol. 63; no. 2; pp. 235 - 242
Main Authors Fadeev, A. V., Myakon’kikh, A. V., Rudenko, K. V.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.02.2018
Springer
Springer Nature B.V
Subjects
ASPECT RATIO
Atomic layer epitaxy
Atomic structure
Classical and Continuum Physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
High aspect ratio
LAYERS
Mathematical models
Physics
Physics and Astronomy
Physics of Nanostructures
Precursors
SIMULATION
THICKNESS
THREE-DIMENSIONAL LATTICES
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Summary:A theoretical model has been suggested that makes it possible to predict the profile of a film deposited on the walls of a high aspect ratio structure (trench) by atomic layer deposition versus the deposition parameters. In addition, the model allows one to calculate the optimal time of precursor doping that provides the conformal coating of the trench walls. The deposition of films with different thicknesses has been described by an approximant that includes two asymptotical deposition conditions with different relationships between the precursor molecule sticking coefficient and aspect ratio of the trench.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784218020123