Criterion for strong localization on a semiconductor surface in the Thomas–Fermi approximation

The localization behavior of a two-dimensional electron gas confined at the surface of a heavily doped semiconductor under conditions of the “natural” size effect in the space-charge region is investigated. The scattering of low-energy electrons by the chaotic potential formed at the surface by poin...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 51; no. 10; pp. 1321 - 1325
Main Authors Bondarenko, V. B., Filimonov, A. V.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.10.2017
Springer
Springer Nature B.V
Subjects
Analysis
CHAOS THEORY
Criteria
DOPED MATERIALS
Electron gas
Electrons
Localization
Low-Dimensional Systems
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Physics
Physics and Astronomy
POINT CHARGE
Quantum Phenomena
SEMICONDUCTOR MATERIALS
Semiconductor Structures
Size effects
SPACE CHARGE
THOMAS-FERMI MODEL
TWO-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL SYSTEMS
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Summary:The localization behavior of a two-dimensional electron gas confined at the surface of a heavily doped semiconductor under conditions of the “natural” size effect in the space-charge region is investigated. The scattering of low-energy electrons by the chaotic potential formed at the surface by point charges of ionized impurities is analyzed and the electron mean free path is determined. A criterion for strong localization in this two-dimensional electron system is obtained on the basis of the Ioffe–Regel criterion.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617100062