The electronic structure of colossal magnetoresistive manganites

The ferromagnetic manganites A1 − xBxMnO3 (A a trivalent element and B divalent) have been the subject of intensive study in the past few years. These manganites exhibit colossal magnetoresistance (CMR), i.e. their resistance can drop several orders of magnitude under influence of an external magnet...

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Bibliographic Details
Published inComputational materials science Vol. 10; no. 1-4; pp. 240 - 244
Main Authors de Boer, P.K., de Groot, R.A.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.02.1998
Elsevier Science
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electron density of states and band structure of crystalline solids
Electron states
Electronic transport in condensed matter
Exact sciences and technology
Galvanomagnetic and other magnetotransport effects
Other inorganic compounds
Physics
Electronic structure
Inorganic compounds
Transition element compounds
Theoretical study
Giant magnetoresistance
Electronic density of states
Quaternary compounds
Manganites
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Summary:The ferromagnetic manganites A1 − xBxMnO3 (A a trivalent element and B divalent) have been the subject of intensive study in the past few years. These manganites exhibit colossal magnetoresistance (CMR), i.e. their resistance can drop several orders of magnitude under influence of an external magnetic field. Electronic structure calculations show that these manganites are half-metallic: they are conducting for one spin direction exclusively. The possible relation between half-metallic magnetism and colossal magnetoresistance is discussed.
ISSN:0927-0256
1879-0801
DOI:10.1016/S0927-0256(97)00147-X