Predictive Simulation of Advanced Nano-CMOS Devices Based on kMC Process Simulation

• Published in: IEEE transactions on electron devices Vol. 54; no. 9; pp. 2155 - 2163
• Main Authors: Mok, K.R.C., Colombeau, B.., Benistant, F.., Teo, R.S., Yeong, S.H., Yang, B.., Jaraiz, M.., Chu, S.-F.S.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.09.2007; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Advanced CMOS technology; Annealing; atomistic simulations; Calibration; Computer simulation; Design for manufacturability; Devices; Doping; Monte Carlo methods; nanodevices; Nanomaterials; Nanostructure; Object oriented modeling; Optimization; physical modeling; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Silicon; technology computer aided design (TCAD)
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2007.902698

In this paper, accurate and advanced CMOS process and device simulations based on atomistic kinetic Monte Carlo (kMC) process simulator are presented. First, the methodology used to predict continuum 2-D/3-D doping profiles from 3-D atomistic distribution that can be directly transferred from process to device simulator is described. Calibration of damage evolution, dopant diffusion and clustering, interaction with interfaces, and the impact of impurities, which are crucial for accurate simulations, will be presented and discussed. Subsequently, comparison with a wide range of electrical-device characteristics showed that experimental results were remarkably well reproduced by the simulations. Finally, we shall demonstrate that device optimization can be achieved based on kMC process simulations, even for novel coimplant processes. This paves the way for the use of kMC in the design of devices and the optimization of device performance in technology computer-aided design for manufacturing.