A DI/JI-compatible monolithic high-voltage multiplexer

• Published in: IEEE transactions on electron devices Vol. 33; no. 12; pp. 1977 - 1984
• Main Authors: Williams, R.K., Sevilla, L.T., Ruetz, E., Plummer, J.D.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.12.1986; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Bars; Electrical engineering. Electrical power engineering; Electronics; Exact sciences and technology; Integrated circuits; Junctions; Logic gates; MOS devices; Multiplexing; Power electronics, power supplies; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Temperature measurement; Logic circuit; Design; MOS technology; Voltage interfacing; Junction isolation; Multiplexer; Dielectric isolation; Integrated circuit; Power electronics; Manufacturing; Electrical characteristic; High voltage; Dielectric materials; Complementary MOS technology; Electrical insulation; Junction; Monolithic integrated circuit; Switching; Analog multiplexer
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/T-ED.1986.22856

A high-voltage multiplexer fabricated with both junction-isolated ( JI ) and dielectrically isolated ( DI ) D/CMOS process technologies is described in this paper. This eight-channel multiplexer is capable of switching a ± 50-V analog-signal range from a ± 60-V power supply. The switches exhibit less than 50 Ω of on-resistance and are capable of peak currents in excess of 0.5 A. An off-switch current model incorporating junction area and lifetime-dependent lateral DMOS drain-to-body and drain-to-substrate leakages is described. Elimination of the drain-to-substrate diode with dielectric isolation results in a factor of 15 reduction in leakage at 25°C and a factor of 10 improvement at 125°C, which agrees well with the model developed. Results show that the generation current from the space-charge region dominates device leakage at room temperature, while diffusion current from the neutral regions is predominant at elevated temperatures. In high-voltage testers, dielectrically isolated multiplexers offer the low leakage and high accuracy required by critical channels where less costly junction-isolated devices will not suffice.