Effects of magnetic field on the manganite-based trilayer junction

A heterojunction has been fabricated by growing a $\chem{La_{0.29}Pr_{0.38}Ca_{0.33}Mn}$-$\chem{O_3}$ (LPCM) film on an $\chem{AlN}$ buffer layer above the 0.5$\un{wt}$% $\chem{Nb}$-doped $\chem{SrTiO_3}$ substrate, and its behavior under magnetic field is studied. The magnetic field greatly affects...

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Published inEurophysics letters Vol. 66; no. 6; pp. 868 - 873
Main Authors Sun, J. R, Xiong, C. M, Chen, Y. F, Shen, B. G, Kang, L
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.06.2004
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Abstract A heterojunction has been fabricated by growing a $\chem{La_{0.29}Pr_{0.38}Ca_{0.33}Mn}$-$\chem{O_3}$ (LPCM) film on an $\chem{AlN}$ buffer layer above the 0.5$\un{wt}$% $\chem{Nb}$-doped $\chem{SrTiO_3}$ substrate, and its behavior under magnetic field is studied. The magnetic field greatly affects the rectifying property and the resistance of the junction, causing an extremely large magnetoresistance (MR). The MR is asymmetric with respect to the direction of the current, and can be either positive or negative, depending on temperature and bias current. A change of the band structure of LPCM under external field may be responsible for these observations.
AbstractList A heterojunction has been fabricated by growing a $\chem{La_{0.29}Pr_{0.38}Ca_{0.33}Mn}$-$\chem{O_3}$ (LPCM) film on an $\chem{AlN}$ buffer layer above the 0.5$\un{wt}$% $\chem{Nb}$-doped $\chem{SrTiO_3}$ substrate, and its behavior under magnetic field is studied. The magnetic field greatly affects the rectifying property and the resistance of the junction, causing an extremely large magnetoresistance (MR). The MR is asymmetric with respect to the direction of the current, and can be either positive or negative, depending on temperature and bias current. A change of the band structure of LPCM under external field may be responsible for these observations.
A heterojunction has been fabricated by growing a La0.29Pr0.38Ca0.33Mn-O3 (LPCM) film on an AlN buffer layer above the 0.5 wt% Nb-doped SrTiO3 substrate, and its behavior under magnetic field is studied. The magnetic field greatly affects the rectifying property and the resistance of the junction, causing an extremely large magnetoresistance (MR). The MR is asymmetric with respect to the direction of the current, and can be either positive or negative, depending on temperature and bias current. A change of the band structure of LPCM under external field may be responsible for these observations.
Author Xiong, C. M
Shen, B. G
Chen, Y. F
Kang, L
Sun, J. R
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10.1143/JJAP.38.2675
10.1103/PhysRev.83.650
10.1103/PhysRevB.54.R8357
10.1103/PhysRevLett.75.914
10.1103/PhysRev.83.768
10.1143/JJAP.37.L999
10.1103/PhysRevLett.79.5150
10.1063/1.118651
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Snippet A heterojunction has been fabricated by growing a $\chem{La_{0.29}Pr_{0.38}Ca_{0.33}Mn}$-$\chem{O_3}$ (LPCM) film on an $\chem{AlN}$ buffer layer above the...
A heterojunction has been fabricated by growing a La0.29Pr0.38Ca0.33Mn-O3 (LPCM) film on an AlN buffer layer above the 0.5 wt% Nb-doped SrTiO3 substrate, and...
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Title Effects of magnetic field on the manganite-based trilayer junction
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