Effects of magnetic field on the manganite-based trilayer junction

• Published in: Europhysics letters Vol. 66; no. 6; pp. 868 - 873
• Main Authors: Sun, J. R, Xiong, C. M, Chen, Y. F, Shen, B. G, Kang, L
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.06.2004; EDP Sciences
• Subjects: 73.40.Lq; 73.50.-h; 75.47.Gk
• ISSN: 0295-5075; 1286-4854
• DOI: 10.1209/epl/i2004-10032-x

A heterojunction has been fabricated by growing a $\chem{La_{0.29}Pr_{0.38}Ca_{0.33}Mn}$-$\chem{O_3}$ (LPCM) film on an $\chem{AlN}$ buffer layer above the 0.5$\un{wt}$% $\chem{Nb}$-doped $\chem{SrTiO_3}$ substrate, and its behavior under magnetic field is studied. The magnetic field greatly affects the rectifying property and the resistance of the junction, causing an extremely large magnetoresistance (MR). The MR is asymmetric with respect to the direction of the current, and can be either positive or negative, depending on temperature and bias current. A change of the band structure of LPCM under external field may be responsible for these observations.