NV‐Center Formation in Single Crystal Diamond at Different CVD Growth Conditions

• Published in: Physica status solidi. A, Applications and materials science Vol. 215; no. 22
• Main Authors: Lobaev, Mikhail A., Gorbachev, Alexei M., Bogdanov, Sergey A., Vikharev, Anatoly L., Radishev, Dmitry B., Isaev, Vladimir A., Drozdov, Mikhail N.
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 21.11.2018
• Subjects: CVD diamond growth; delta doping; Diamonds; Fluorescence; Misalignment; Nitrogen; nitrogen incorporation; Single crystals
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201800205

The nitrogen incorporation, diamond growth rate and fluorescence of as‐grown NV centers is studied at different CVD diamond growth conditions. Also, the influence of the misorientation angle is investigated. Heavily nitrogen doped layers are grown at different gas pressures and methane contents, with the maximum nitrogen concentration in the doped layer reaching 7 × 1019 cm−3. The ratio of NV center concentration to the total nitrogen content was determined. The studies are aimed to determine the conditions for creating ensembles with a high concentration of NV centers localized in diamond with nanometer accuracy. Heavily nitrogen doped diamond layers are obtained by the CVD growth using the substrate with different misorientation angles. The maximum nitrogen concentration in the doped layer reaches 7 × 1019 cm−3 at a maximum misorientation angle (4.2°) and NV‐concentration ≈0.5 ppm.