Single‐Component CMOS‐Like Logic using Diketopyrrolopyrrole‐Based Ambipolar Organic Electrochemical Transistors
Complementary circuits based on organic electrochemical transistors (OECTs) are attractive for the development of inexpensive and disposable point‐of‐care bioelectronic devices. Ambipolar OECTs, which employ a single channel material, could decrease the fabrication complexity and manufacturing costs...
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Published in | Advanced functional materials Vol. 31; no. 45 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Hoboken
Wiley Subscription Services, Inc
01.11.2021
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Subjects | |
Online Access | Get full text |
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Summary: | Complementary circuits based on organic electrochemical transistors (OECTs) are attractive for the development of inexpensive and disposable point‐of‐care bioelectronic devices. Ambipolar OECTs, which employ a single channel material, could decrease the fabrication complexity and manufacturing costs of such circuits. An ideal channel material for ambipolar OECTs should be electrochemically stable in aqueous environments, afford facile ion insertion for both cations and anions, and also facilitate high and balanced electron and hole transport. In this study, triethylene glycol functionalized diketopyrrolopyrrole (DPP)‐based polymer is proposed for the development of ambipolar OECTs. It is shown that DPP‐based OECTs have a high and comparable figure of merit for both n‐ and p‐type operations. Logic NOT, NAND, and NOR operations with corresponding complementary circuits constructed from identical DPP‐based OECT devices are demonstrated. This study is an important step toward the development of sophisticated complementary metal–oxide–semiconductor‐like logic circuits using single‐component OECTs.
2DPP‐OD‐TEG with a diketopyrrolopyrrole backbone is proposed as an organic electrochemical transistor (OECT) channel material for ambipolar OECTs. OECTs with 2DPP‐OD‐TEG channels afford balanced n‐ and p‐type performance, enabling DPP‐based ambipolar OECTs that are configured into CMOS‐like logic NOT, NAND, and NOR gates. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
ISSN: | 1616-301X 1616-3028 |
DOI: | 10.1002/adfm.202102903 |