Cd-composition induced effects on structure, optical and electrical properties of sputtered Zn1−xCdxO films

• Published in: Ceramics international Vol. 41; no. 4; pp. 5414 - 5420
• Main Authors: Sui, Y.R., Yue, Y.G., Song, Y.P., Yao, B., Cao, Y., Lang, J.H., Li, X.Y., Yang, J.H.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.05.2015
• Subjects: C. Electrical properties; C. Optical properties; Magnetron sputtering; Structure; Zn1−xCdxO films; Zn1−xCdxO films; Magnetron sputtering; Structure; C. Optical properties; C. Electrical properties
• ISSN: 0272-8842; 1873-3956
• DOI: 10.1016/j.ceramint.2014.12.106

Zn1−xCdxO films with different Cd contents (0≤x≤1) were successfully deposited on quartz substrates by the direct current reactive magnetron sputtering and post-annealing techniques. It was found that structures, band gaps and electrical properties of the films can be tuned by changing Cd contents x. The Zn1−xCdxO film consists of wurtzite phase with highly (002)-preferred orientation at x from 0 to 0.2, mixture of wurtzite and cubic phases at x=0.5, and cubic phase with highly (200)-preferred orientation at x≥0.8. The band gap decreases from 3.25eV at x=0 to 2.75eV at x=0.2 for the wurtzite Zn1−xCdxO, and decreases from 2.52eV at x=0.8 to 2.42eV at x=1, which has a little change for cubic Zn1−xCdxO. In addition, Hall measurement results indicate that the influence of Cd content on the conduction behavior of Zn1−xCdxO films is significant. The chemical compositions and the bonding states of Zn1−xCdxO films were examined by X-ray photoelectron spectroscopy analysis.