A new analog buffer using P-type poly-Si TFTs for active matrix displays

A new simple analog buffer employing p-type low-temperature poly-Si thin-film transistors (TFTs) are proposed and fabricated for the integrated data driving circuits of AMLCD and AMOLED. The new analog buffer does not use any capacitors to store the threshold voltage of a poly-Si TFT, so that it cou...

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Bibliographic Details
Published inIEEE electron device letters Vol. 27; no. 1; pp. 40 - 42
Main Authors JUNG, Sang-Hoon, NAM, Woo-Jin, LEE, Jae-Hoon, HAN, Min-Koo
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.01.2006
Institute of Electrical and Electronics Engineers
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:A new simple analog buffer employing p-type low-temperature poly-Si thin-film transistors (TFTs) are proposed and fabricated for the integrated data driving circuits of AMLCD and AMOLED. The new analog buffer does not use any capacitors to store the threshold voltage of a poly-Si TFT, so that it could reduce the output offset by the subthreshold current of poly-Si TFT. The simulation and experimental result exhibit that the buffer output successfully charges the buffer load (/spl sim/20 pF) to the input value quickly by the boot-strapping. The measured output offset voltages are less than /spl plusmn/70 mV when the input varies from 1 to 10 V.
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.859949