A new analog buffer using P-type poly-Si TFTs for active matrix displays
A new simple analog buffer employing p-type low-temperature poly-Si thin-film transistors (TFTs) are proposed and fabricated for the integrated data driving circuits of AMLCD and AMOLED. The new analog buffer does not use any capacitors to store the threshold voltage of a poly-Si TFT, so that it cou...
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Published in | IEEE electron device letters Vol. 27; no. 1; pp. 40 - 42 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.01.2006
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | A new simple analog buffer employing p-type low-temperature poly-Si thin-film transistors (TFTs) are proposed and fabricated for the integrated data driving circuits of AMLCD and AMOLED. The new analog buffer does not use any capacitors to store the threshold voltage of a poly-Si TFT, so that it could reduce the output offset by the subthreshold current of poly-Si TFT. The simulation and experimental result exhibit that the buffer output successfully charges the buffer load (/spl sim/20 pF) to the input value quickly by the boot-strapping. The measured output offset voltages are less than /spl plusmn/70 mV when the input varies from 1 to 10 V. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 ObjectType-Article-2 ObjectType-Feature-1 |
ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2005.859949 |