Epitaxial lateral overgrowth of AlxGa1-xN (x > 0.2) on sapphire and its application to UV-B-light-emitting devices
Crack-free and low-dislocation-density AlxGa1-xN with x higher than 0.2 was successfully grown on a grooved AlN template prepared on a sapphire substrate. Efficient UV-B-light-emitting diodes can be fabricated on such an AlGaN layer.
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| Published in | Journal of crystal growth Vol. 298; pp. 265 - 267 |
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| Main Authors | , , , , , , |
| Format | Conference Proceeding Journal Article |
| Language | English |
| Published |
Amsterdam
Elsevier
2007
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Crack-free and low-dislocation-density AlxGa1-xN with x higher than 0.2 was successfully grown on a grooved AlN template prepared on a sapphire substrate. Efficient UV-B-light-emitting diodes can be fabricated on such an AlGaN layer. |
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| AbstractList | Crack-free and low-dislocation-density AlxGa1-xN with x higher than 0.2 was successfully grown on a grooved AlN template prepared on a sapphire substrate. Efficient UV-B-light-emitting diodes can be fabricated on such an AlGaN layer. |
| Author | AMANO, Hiroshi IWAYA, Motoaki KAMIYAMA, Satoshi BANDOH, Akira AKASAKI, Isamu IIDA, Kazuyoshi KAWASHIMA, Takeshi |
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| Cites_doi | 10.1143/JJAP.41.L320 10.1063/1.1519100 10.1016/S0022-0248(02)01930-9 10.1063/1.1480886 10.1016/j.jcrysgro.2004.08.052 10.1143/JJAP.41.L450 10.1002/pssa.200565389 10.1143/JJAP.42.L628 10.1002/1521-396X(200111)188:1<117::AID-PSSA117>3.0.CO;2-X |
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| Keywords | A3. Heteroepitaxial lateral overgrowth AlGaN; A3. Metal-organic vapor phase epitaxy; Bl. AlGaN; Bl. AlN; B3. UV-light-emitting diode Epitaxy Aluminium nitride 78.55.Cr; 78.66.Fd; 85.60.Jb Template reaction Epitaxial film Gallium nitride III-V compound Inorganic compound Light emitting diode Dislocation density Sapphire MOVPE method Optoelectronic device Heteroepitaxy III-V semiconductors |
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| References | Adivarahan (10.1016/j.jcrysgro.2006.10.026_bib3) 2002; 81 Iwaya (10.1016/j.jcrysgro.2006.10.026_bib7) 2001; 188 Hanlon (10.1016/j.jcrysgro.2006.10.026_bib5) 2003; 42 Kipshidze (10.1016/j.jcrysgro.2006.10.026_bib6) 2001; 80 Iida (10.1016/j.jcrysgro.2006.10.026_bib9) 2004; 272 Nakano (10.1016/j.jcrysgro.2006.10.026_bib10) 2006; 203 Chitnis (10.1016/j.jcrysgro.2006.10.026_bib2) 2002; 41 Chitnis (10.1016/j.jcrysgro.2006.10.026_bib1) 2002; 41 10.1016/j.jcrysgro.2006.10.026_bib8 Zhu (10.1016/j.jcrysgro.2006.10.026_bib4) 2003; 248 |
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| Title | Epitaxial lateral overgrowth of AlxGa1-xN (x > 0.2) on sapphire and its application to UV-B-light-emitting devices |
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