Epitaxial lateral overgrowth of AlxGa1-xN (x > 0.2) on sapphire and its application to UV-B-light-emitting devices

Crack-free and low-dislocation-density AlxGa1-xN with x higher than 0.2 was successfully grown on a grooved AlN template prepared on a sapphire substrate. Efficient UV-B-light-emitting diodes can be fabricated on such an AlGaN layer.

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Published inJournal of crystal growth Vol. 298; pp. 265 - 267
Main Authors IIDA, Kazuyoshi, KAWASHIMA, Takeshi, IWAYA, Motoaki, KAMIYAMA, Satoshi, AMANO, Hiroshi, AKASAKI, Isamu, BANDOH, Akira
Format Conference Proceeding Journal Article
LanguageEnglish
Published Amsterdam Elsevier 2007
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Abstract Crack-free and low-dislocation-density AlxGa1-xN with x higher than 0.2 was successfully grown on a grooved AlN template prepared on a sapphire substrate. Efficient UV-B-light-emitting diodes can be fabricated on such an AlGaN layer.
AbstractList Crack-free and low-dislocation-density AlxGa1-xN with x higher than 0.2 was successfully grown on a grooved AlN template prepared on a sapphire substrate. Efficient UV-B-light-emitting diodes can be fabricated on such an AlGaN layer.
Author AMANO, Hiroshi
IWAYA, Motoaki
KAMIYAMA, Satoshi
BANDOH, Akira
AKASAKI, Isamu
IIDA, Kazuyoshi
KAWASHIMA, Takeshi
Author_xml – sequence: 1
  givenname: Kazuyoshi
  surname: IIDA
  fullname: IIDA, Kazuyoshi
  organization: Faculty of Science and Technology, 21st-Century COE Program Nano Factory, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
– sequence: 2
  givenname: Takeshi
  surname: KAWASHIMA
  fullname: KAWASHIMA, Takeshi
  organization: Faculty of Science and Technology, 21st-Century COE Program Nano Factory, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
– sequence: 3
  givenname: Motoaki
  surname: IWAYA
  fullname: IWAYA, Motoaki
  organization: Faculty of Science and Technology, 21st-Century COE Program Nano Factory, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
– sequence: 4
  givenname: Satoshi
  surname: KAMIYAMA
  fullname: KAMIYAMA, Satoshi
  organization: Faculty of Science and Technology, 21st-Century COE Program Nano Factory, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
– sequence: 5
  givenname: Hiroshi
  surname: AMANO
  fullname: AMANO, Hiroshi
  organization: Faculty of Science and Technology, 21st-Century COE Program Nano Factory, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
– sequence: 6
  givenname: Isamu
  surname: AKASAKI
  fullname: AKASAKI, Isamu
  organization: Faculty of Science and Technology, 21st-Century COE Program Nano Factory, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
– sequence: 7
  givenname: Akira
  surname: BANDOH
  fullname: BANDOH, Akira
  organization: Corporate R&D Center, Showa-Denko K.K., 1-1-1 Ohodai, Midori-ku, Chiba 267-0056, Japan
BackLink http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18578742$$DView record in Pascal Francis
BookMark eNpFUE1LxDAQDaLg-vEXJBdFD6mTtEnTi6DiF4he1GvJpululmxTk6yu_94sKjIwj3kz7w28PbQ9-MEgdEShoEDF-aJY6PAVZ8EXDEBksgAmttCEyrokHIBto0nujACr5C7ai3EBkJUUJijcjDaptVUOO5VMyOg_TMhmn2mOfY8v3fpOUbJ-wqdrfIGhYGfYDziqcZzbYLAaOmxTxHl2Vqtk8zJ5_PpGroizs3kiZmlTssMMd-bDahMP0E6vXDSHv7iPXm9vXq7vyePz3cP15SPRpWSJdCXntBId5bXRpS5ZJ8UU6p7LGpQWXaOnqm8amktyZkDKKZcVUFPJbtoIVe6jkx_fMfj3lYmpXdqojXNqMH4VW9bwUlIh8qH4OdTBxxhM347BLlX4aim0m4jbRfsXcbuJeMPniLPw-PeDilq5PqhB2_ivlryWdcXKb_A5gC8
CODEN JCRGAE
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Cites_doi 10.1143/JJAP.41.L320
10.1063/1.1519100
10.1016/S0022-0248(02)01930-9
10.1063/1.1480886
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10.1002/pssa.200565389
10.1143/JJAP.42.L628
10.1002/1521-396X(200111)188:1<117::AID-PSSA117>3.0.CO;2-X
ContentType Conference Proceeding
Journal Article
Copyright 2007 INIST-CNRS
Copyright_xml – notice: 2007 INIST-CNRS
DBID IQODW
AAYXX
CITATION
7QF
7SR
7U5
8BQ
8FD
JG9
L7M
DOI 10.1016/j.jcrysgro.2006.10.026
DatabaseName Pascal-Francis
CrossRef
Aluminium Industry Abstracts
Engineered Materials Abstracts
Solid State and Superconductivity Abstracts
METADEX
Technology Research Database
Materials Research Database
Advanced Technologies Database with Aerospace
DatabaseTitle CrossRef
Materials Research Database
Engineered Materials Abstracts
Aluminium Industry Abstracts
Technology Research Database
Solid State and Superconductivity Abstracts
Advanced Technologies Database with Aerospace
METADEX
DatabaseTitleList Materials Research Database
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Chemistry
Applied Sciences
Physics
EISSN 1873-5002
EndPage 267
ExternalDocumentID 10_1016_j_jcrysgro_2006_10_026
18578742
GroupedDBID --K
--M
-~X
.~1
0R~
1B1
1RT
1~.
1~5
29K
4.4
457
4G.
53G
5GY
5VS
7-5
71M
8P~
9JN
AABNK
AACTN
AAEDT
AAEDW
AAIAV
AAIKJ
AAKOC
AALRI
AAOAW
AAQFI
AAQXK
AAXUO
ABFNM
ABJNI
ABMAC
ABNEU
ABPIF
ABPTK
ABXDB
ABYKQ
ACDAQ
ACFVG
ACGFS
ACIWK
ACNNM
ACRLP
ADBBV
ADEZE
ADIYS
ADMUD
AEBSH
AEKER
AENEX
AFFNX
AFKWA
AFTJW
AGHFR
AGUBO
AGYEJ
AHHHB
AI.
AIEXJ
AIKHN
AITUG
AIVDX
AJBFU
AJOXV
ALMA_UNASSIGNED_HOLDINGS
AMFUW
AMRAJ
ASPBG
AVWKF
AXJTR
AZFZN
BBWZM
BKOJK
BLXMC
CS3
D-I
DU5
EBS
EFJIC
EJD
EO8
EO9
EP2
EP3
F5P
FDB
FEDTE
FGOYB
FIRID
FNPLU
FYGXN
G-2
G-Q
GBLVA
HMV
HVGLF
HZ~
IHE
IQODW
J1W
KOM
M24
M38
M41
MO0
N9A
NDZJH
O-L
O9-
OAUVE
OGIMB
OZT
P-8
P-9
P2P
PC.
Q38
R2-
RIG
RNS
ROL
RPZ
SDF
SDG
SDP
SES
SEW
SMS
SPC
SPCBC
SPD
SPG
SSQ
SSZ
T5K
TN5
VH1
WUQ
XPP
ZMT
~02
~G-
AAXKI
AAYXX
ADVLN
AFJKZ
AKRWK
CITATION
7QF
7SR
7U5
8BQ
8FD
JG9
L7M
ID FETCH-LOGICAL-c382t-d355146d157ec3c32d86b07f5870ac6d9cbaf991919852e088b58401e48db96a3
ISSN 0022-0248
IngestDate Sat Oct 26 01:20:16 EDT 2024
Thu Sep 26 18:05:29 EDT 2024
Wed Dec 20 09:38:15 EST 2023
IsPeerReviewed true
IsScholarly true
Keywords A3. Heteroepitaxial lateral overgrowth AlGaN; A3. Metal-organic vapor phase epitaxy; Bl. AlGaN; Bl. AlN; B3. UV-light-emitting diode
Epitaxy
Aluminium nitride
78.55.Cr; 78.66.Fd; 85.60.Jb
Template reaction
Epitaxial film
Gallium nitride
III-V compound
Inorganic compound
Light emitting diode
Dislocation density
Sapphire
MOVPE method
Optoelectronic device
Heteroepitaxy
III-V semiconductors
Language English
License CC BY 4.0
LinkModel OpenURL
MeetingName Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Phoenix Seagaia Resort, Miyazaki, 22-26 May 2006
MergedId FETCHMERGED-LOGICAL-c382t-d355146d157ec3c32d86b07f5870ac6d9cbaf991919852e088b58401e48db96a3
Notes ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
PQID 29538166
PQPubID 23500
PageCount 3
ParticipantIDs proquest_miscellaneous_29538166
crossref_primary_10_1016_j_jcrysgro_2006_10_026
pascalfrancis_primary_18578742
PublicationCentury 2000
PublicationDate 2007
2007-1-00
20070101
PublicationDateYYYYMMDD 2007-01-01
PublicationDate_xml – year: 2007
  text: 2007
PublicationDecade 2000
PublicationPlace Amsterdam
PublicationPlace_xml – name: Amsterdam
PublicationTitle Journal of crystal growth
PublicationYear 2007
Publisher Elsevier
Publisher_xml – name: Elsevier
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Iwaya (10.1016/j.jcrysgro.2006.10.026_bib7) 2001; 188
Hanlon (10.1016/j.jcrysgro.2006.10.026_bib5) 2003; 42
Kipshidze (10.1016/j.jcrysgro.2006.10.026_bib6) 2001; 80
Iida (10.1016/j.jcrysgro.2006.10.026_bib9) 2004; 272
Nakano (10.1016/j.jcrysgro.2006.10.026_bib10) 2006; 203
Chitnis (10.1016/j.jcrysgro.2006.10.026_bib2) 2002; 41
Chitnis (10.1016/j.jcrysgro.2006.10.026_bib1) 2002; 41
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Zhu (10.1016/j.jcrysgro.2006.10.026_bib4) 2003; 248
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SSID ssj0001610
Score 1.9860324
Snippet Crack-free and low-dislocation-density AlxGa1-xN with x higher than 0.2 was successfully grown on a grooved AlN template prepared on a sapphire substrate....
SourceID proquest
crossref
pascalfrancis
SourceType Aggregation Database
Index Database
StartPage 265
SubjectTerms Applied sciences
Cross-disciplinary physics: materials science; rheology
Electronics
Exact sciences and technology
Materials science
Optoelectronic devices
Other semiconductors
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Specific materials
Title Epitaxial lateral overgrowth of AlxGa1-xN (x > 0.2) on sapphire and its application to UV-B-light-emitting devices
URI https://search.proquest.com/docview/29538166
Volume 298
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1bi9NAFB7KiqgIal2xXtZ5UFCWdNNMJpcXoa7VrdBF2NbdfSqTycTdWpvSpNDdB3-TP9FzMrl1WxClEMokmZA5X875ZuZcCHltRQ5nQSgN6ZnMsKWLelDYhuyELujDKPCCzEH22Dka2V_O-Fmj8bvmtbRMg7a83hpX8j9ShTaQK0bJ_oNky06hAf6DfOEIEobjpoy3mpoan5SLqwQjG7_DxDq9qEOhh5VBVrg0PhUYcAyXw6vq6zImOl19Fh1jdYx0c7X_hvX2zbaF6wUAjUTM57iAXe4y1La8kbiOvhkfjGmWjkT9vNRe1KHK9E8Ju_7HrvbcuF5excnFZanlu6fdk6P-IDs7FD9U7Vz_tHuetQ_iNAaaW90z6J939S0nIi27K1Yu3BsrF0VITV09w8wYk6xp46Q1sucyg5vmmsq2dOXqQunqahO5_bZ0eY8N06BXKSbtCYoDhlhvRKFnn7UlF_cNG1l6LmLqLM-1wejfspjPUY-2f1VORcCfzSI_Pb5ILSZ9-5PX6ND9uUjgy4x0SZUNdpBRnuFDslsFg9KvJfYekYaaNcmDfPZCc9uQNMmdw6J2YJPcq6W5bJLbmZuxTB6TRQlFmkORVlCkcURLKNK3K_qeAgzf0XhGCxBSACEFENIaCGka0y0gpDkId8noU294eGTkVT8MyTwrNUKGJN4JO9xVkklmhZ4TmG7EwbII6YS-DEQEsxr4edxSYCUDINFmR9leGPiOYE_IziyeqaeEBiyycT4c2R63lS98kIjbkb5gDpdcyRY5KAZ_PNfJXcaF1-NkXIgLK7U62A7iapG9NRlVt-W4aJFXhdDGMOa4-yZmKl4mY8vn2Sb9s7918Zzcrb6WF2QnXSzVS2C-abCXge0P_76tEQ
link.rule.ids 310,311,315,786,790,795,796,4069,4070,23958,23959,25170,27955,27956
linkProvider Elsevier
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=proceeding&rft.title=Journal+of+crystal+growth&rft.atitle=Epitaxial+lateral+overgrowth+of+AlxGa1-xN+%28x+%3E+0.2%29+on+sapphire+and+its+application+to+UV-B-light-emitting+devices&rft.au=IIDA%2C+Kazuyoshi&rft.au=KAWASHIMA%2C+Takeshi&rft.au=IWAYA%2C+Motoaki&rft.au=KAMIYAMA%2C+Satoshi&rft.date=2007-01-01&rft.pub=Elsevier&rft.issn=0022-0248&rft.eissn=1873-5002&rft.volume=298&rft.spage=265&rft.epage=267&rft_id=info:doi/10.1016%2Fj.jcrysgro.2006.10.026&rft.externalDBID=n%2Fa&rft.externalDocID=18578742
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0022-0248&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0022-0248&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0022-0248&client=summon