Epitaxial lateral overgrowth of AlxGa1-xN (x > 0.2) on sapphire and its application to UV-B-light-emitting devices

Crack-free and low-dislocation-density AlxGa1-xN with x higher than 0.2 was successfully grown on a grooved AlN template prepared on a sapphire substrate. Efficient UV-B-light-emitting diodes can be fabricated on such an AlGaN layer.

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Bibliographic Details
Published inJournal of crystal growth Vol. 298; pp. 265 - 267
Main Authors IIDA, Kazuyoshi, KAWASHIMA, Takeshi, IWAYA, Motoaki, KAMIYAMA, Satoshi, AMANO, Hiroshi, AKASAKI, Isamu, BANDOH, Akira
Format Conference Proceeding Journal Article
LanguageEnglish
Published Amsterdam Elsevier 2007
Subjects
Applied sciences
Cross-disciplinary physics: materials science; rheology
Electronics
Exact sciences and technology
Materials science
Optoelectronic devices
Other semiconductors
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Specific materials
A3. Heteroepitaxial lateral overgrowth AlGaN; A3. Metal-organic vapor phase epitaxy; Bl. AlGaN; Bl. AlN; B3. UV-light-emitting diode
Epitaxy
Aluminium nitride
78.55.Cr; 78.66.Fd; 85.60.Jb
Template reaction
Epitaxial film
Gallium nitride
III-V compound
Inorganic compound
Light emitting diode
Dislocation density
Sapphire
MOVPE method
Optoelectronic device
Heteroepitaxy
III-V semiconductors
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Summary:Crack-free and low-dislocation-density AlxGa1-xN with x higher than 0.2 was successfully grown on a grooved AlN template prepared on a sapphire substrate. Efficient UV-B-light-emitting diodes can be fabricated on such an AlGaN layer.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2006.10.026